Amorphization of sapphire during ion beam mixing
نویسندگان
چکیده
منابع مشابه
Ion-beam Mixing and Solid-state Reaction
Vapor-deposited Zr-Fe multilayered thin films with various wavelengths and of overall composition either 50% Fe or Fe-rich up to 57 % Fe were either irradiated with 300 keV Kr ions at temperatures from 25K to 623 K to fluences up to 2 x 10l6 cm-2, or simply annealed at 773K in-situ in the Intermediate Voltage Electron Microscope at Argonne National Laboratory. Under irradiation, the final react...
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We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted singlecrystalline silicon using results of multidimensional Monte Carlo simulations. Our approach is based on the concept of the critical damage energy density [1]. Additionally, the self-annealing of radiation damage during ion implantation is taken into account because this effect is crucial...
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1 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA 2 Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA, USA 3 School of Materials Science and Engineering, Nanyang Technological University, Singapore 4 Department of Geological Sciences, University of Michigan, Ann Arbor, MI, USA 5 Departmen...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 1994
ISSN: 0168-583X
DOI: 10.1016/0168-583x(94)96286-3